6 Watt DC-DC converter optimized for IGBT, SiC and MOSFET gate drive applications


Hoofddorp, Netherlands: Murata today announced an extension to their  MGJ6 series of isolated 6 Watt dual output DC-DC converters from Murata Power Solutions. Optimized to suit the bipolar voltages required for high-side and low-side IGBT, SiC and MOSFET gate drive applications, the MGJ6 series is available now in SIP, DIP and a low profile surface mount package format. The series comprises combinations of wide input voltages with nominals of 5, 12, or 24 VDC  and + 15 / – 5, + 15 / – 10 or + 20 / – 5 VDC outputs. Suitable for low to medium power applications that require a DC link voltage up to 3 kVDC, the asymmetric outputs provide optimum drive levels to maintain a high system efficiency with low EMI levels. Also, with its very low coupling capacitance, typically 15pF EMI coupling through  the converter is reduced.

The MGJ6 series has a characterized dV/dt immunity of 80 kV/us minimum at 1.6 kV, this contributing to a high degree of reliability in fast switching drive systems. The series also has  characterized partial discharge performance, this being crucial to achieving a long service life in high performance applications.

Certification to  safety standard UL60950 for reinforced insulation and the medical 3rd edition safety standard ANSI/AAMI ES60601-1 for 2 MOOPs and 2 MOPPs is currently pending.  With a creepage and clearance of 8 mm, the MGJ6 will satisfy safety agency requirements for extra high working voltages.

Murata’s product marketing manager, Ann-Marie Bayliss comments, “The MGJ6 series provides optimized voltages for power gate drives for the best overall system performance and efficiency. With characterized partial discharge performance, they are now available, in a choice of form factors ”

Short circuit and overload protection features are standard across the range and a frequency synchronization/enable input pin can simplify EMC filter design.